Wurtzite GaN epilayers, grown on the c-plane of sapphire substrate, have been irradiated
with swift heavy ions at different energies and fluences, and thereafter studied by Raman …

In this work, GaN epilayers, grown on (0 0 0 1) sapphire substrate, were studied under swift
heavy ion irradiation with a broad variety of projectiles at different energies. Several …

GaN epitaxial layers were irradiated with 200 MeV Ag ions at various fluences. These
samples were characterized ex situ by resistivity/Hall, XRD, and transmission electron …

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with
150MeV Ag ions at a fluence of 5× 1012ions/cm2. Samples used in this study are 2μm thick …

InP crystals and GaN films were irradiated by swift heavy ions 86 Kr and 209 Bi with kinetic
energies of 25 and 9.5 MeV per nucleon and ion fluence in the range 5× 10 10 to 3.6× 10 12 …

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au 16+ 197 ions are studied by a
combination of transmission electron microscopy (TEM) and Rutherford backscattering …

We report here Swift heavy ion induced effects in GaN samples grown by metal organic
chemical vapor deposition (MOCVD) technique. These samples were irradiated with 80MeV …

Single crystalline epitaxial GaN films were irradiated with fast (E> 1MeV) or with fast and
thermal neutrons. These irradiation conditions allow the separation of the effect of …

In the present work, the resistivity, mobility and the carrier density at either room temperature
or 77K in 3-μm-thick n-GaN epi-layers irradiated with 290MeV 238U32+ ions were tested …

Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV 1 H, 40 keV 12
C, 50 keV 16 O, 600 keV 28 Si, 130 keV 63 Cu, 200 keV 107 Ag, 300 keV 197 Au, and 500 …