Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …

Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

Knowing and controlling the resistivity of an individual nanowire (NW) is crucial for the
production of new sensors and devices. For ZnO NWs this is poorly understood; a 10 8 …

The minority carrier diffusion length, LD⁠, was directly measured in individual ZnO
nanowires by a near-field scanning photocurrent microscopy technique. The diameter …

Single ZnO nanowires are configured as field effect transistors and their electrical properties
are characterized using scanning probe microscopy (SPM). Scanning surface potential …

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO
multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly …

In this article, the important role of the intrinsic defects in size-controlled ZnO nanowires
(NWs) which play a critical role in the properties of the NWs, was studied with a combined …

Single-crystalline zinc oxide (ZnO) nanowires (NWs) with diameters of 90–200 nm were
synthesized by the thermal evaporation method. Four-probe Ti/Au electrodes were made by …

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using
the electron beam-induced current technique. Systematic measurements as a function of …