The electrical properties of a single facet of an individual ZnO microwire were investigated.
Electrode patterns with a Hall bar structure were deposited on the surface of the top facet of …

We have measured the intrinsic electrical resistivities, ρ (T), of three individual single-
crystalline ZnO nanowires (NWs) from 320 down to 1.3 K. The NWs were synthesized via …

Optically detected magnetic resonance (ODMR) complemented by photoluminescence
measurements is used to evaluate optical and defect properties of ZnO nanowires (NWs) …

A low energy electron point source microscope is used to determine the electrical
conductivity of freestanding ZnO nanowires. The nanowires were contacted with a …

In situ electrical transport measurements on individual bent ZnO nanowires have been
performed inside a high-resolution transmission electron microscope, where the crystal …

We report here investigations of crystal and electronic structure of as-synthesized and
annealed ZnO nanobelts by an in-situ high-resolution transmission electron microscope …

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications
owing to their tunable electron concentration via structural and surface defect engineering. A …

We report intrinsic current-voltage properties of ZnO nanowire measured by a four-tip
scanning tunneling microscopy (F-STM). It is found that after bending the nanowire with the …

Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed
using complex techniques, which necessitates a series of costly nanofabrication procedures …

Direct measurements on electrical characteristics have been carried out in situ inside a
scanning electron microscope using a multiple nanoprobe system on individual Sn O 2 …