On the difficulties in characterizing ZnO nanowires

E Schlenker, A Bakin, T Weimann, P Hinze… - …, 2008 - iopscience.iop.org
The electrical properties of single ZnO nanowires grown by vapor phase transport were
investigated. While some samples were contacted by Ti/Au electrodes, another set of …

[HTML][HTML] Effects of vacuum annealing on the conduction characteristics of ZnO nanosheets

CJ Barnett, NA Smith, DR Jones, TGG Maffeis… - Nanoscale research …, 2015 - Springer
ZnO nanosheets are a relatively new form of nanostructure and have demonstrated potential
as gas-sensing devices and dye sensitised solar cells. For integration into other devices …

Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires

MS Haseman, H Gao, K Duddella… - ACS Applied Materials & …, 2023 - ACS Publications
We directly measure the three-dimensional movement of intrinsic point defects driven by
applied electric fields inside ZnO nano-and micro-wire metal–semiconductor–metal device …

Role of grain boundaries in ZnO nanowire field-effect transistors

Y Yoon, J Lin, SJ Pearton, J Guo - Journal of applied physics, 2007 - pubs.aip.org
ZnO nanowires have attracted strong interest for potential nanoelectronics, optoelectronics,
and nanosensor applications. The role of grain boundaries (GBs) in ZnO nanowire …

Effects of hydroxylation and silanization on the surface properties of ZnO nanowires

C García Núñez, M Sachsenhauser… - … Applied Materials & …, 2015 - ACS Publications
Silanization is commonly used to form bonds between inorganic materials and biomolecules
as a step in the surface preparation of solid-state biosensors. This work investigates the …

Near-field imaging of free carriers in ZnO nanowires with a scanning probe tip made of heavily doped germanium

E Sakat, V Giliberti, M Bollani, A Notargiacomo… - Physical Review …, 2017 - APS
A novel scanning probe tip made of heavily doped semiconductor is fabricated and used
instead of standard gold-coated tips in infrared scattering-type near-field microscopy …

Defect manipulation to control ZnO micro-/nanowire-metal contacts

JW Cox, GM Foster, A Jarjour, H von Wenckstern… - Nano …, 2018 - ACS Publications
Surface states that induce depletion regions are commonly believed to control the transport
of charged carriers through semiconductor nanowires. However, direct, localized optical …

Electrical properties of lightly Ga-doped ZnO nanowires

S Alagha, S Heedt, D Vakulov… - Semiconductor …, 2017 - iopscience.iop.org
We investigated the growth, crystal structure, elemental composition and electrical transport
characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in …

Comparison of three e-beam techniques for electric field imaging and carrier diffusion length measurement on the same nanowires

F Donatini, A de Luna Bugallo, P Tchoulfian… - Nano Letters, 2016 - ACS Publications
Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones,
their performances are frequently limited by an incomplete understanding of their properties …

Growth, doping, and characterization of ZnO nanowire arrays

G Shen, N Dawahre, J Waters, SM Kim… - Journal of Vacuum …, 2013 - pubs.aip.org
Zinc oxide (ZnO) nanowire (NW) arrays were grown by chemical vapor deposition using the
carbothermal reduction of ZnO powder at different pressures from 0.13 to 1.0 atm on basal …