The electrical properties of wurtzite-type ZnO low-dimensional structures were analysed
using a scanning tunnelling microscopy (STM) in situ holder for transmission electron …

Abstract One-dimensional ZnO nanowires (NWs) are a promising materials system for a
variety of applications. Utilization of ZnO, however, requires a good understanding and …

The determination of the carrier concentrations of well-aligned ZnO nanorods grown on p-Si
substrates with ac impedance analysis is discussed. Gate-dependent electrical-transport …

We have systematically investigated the effects of surface roughness on the electrical
characteristics of ZnO nanowire field effect transistors (FETs) before and after passivation by …

Quantitative characterization of electrically active dopants and surface charges in nano-
objects is challenging, since most characterization techniques using electrons [1–3], ions [4] …

An overview of the electrodeposition of ZnO nanowire arrays from the reduction of dissolved
molecular oxygen in zinc chloride solutions was reported. In spite of the internal structure of …

In this work we examined optical and defect properties of as-grown and Ni-coated ZnO
nanowires (NWs) grown by rapid thermal chemical vapor deposition by means of optically …

We report the electrical properties of individual as-grown ZnO nanowires (NWs) on Si O 2∕
Si and GaN/sapphire substrates. Carrier transport in metal-semiconductor-metal junction is …

The current–voltage (I–V) characteristics of single ZnO nanowires have been studied in the
humid air, dry air, vacuum, and under ultraviolet (UV) irradiation. A model of a single ZnO …

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors
(FETs) were successfully fabricated using a photolithography process, and their electrical …