In the last years there has been a renewed interest for zinc oxide semiconductor, mainly
triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films …

The authors have performed variable-temperature electrical measurements on individual
single-crystalline, Mn-doped ZnO nanowires. Using a back-gated field-effect transistor …

The authors demonstrate ZnO based thin-film transistors (TFTs) fabricated using a metal-
organic sol-gel solution process with zinc neodecanoate as precursor. The ZnO films were …

ZnO nanowire based field effect transistor devices show the distinct performance depending
on whether comparably oxygen-rich or oxygen-poor conditions were used for nanowire …

Semiconducting nanowires (NWs) offer exciting prospects for a wide range of technological
applications. The translation of NW science into technology requires reliable high quality …

This article surveys recent developments in the rational synthesis of single‐crystalline zinc
oxide nanowires and their unique optical properties. The growth of ZnO nanowires was …

Using in situ field effect transistor (FET) characterization combined with the molecular beam
epitaxy technique, we demonstrate a significant depletion of electron charge carriers in …

One-dimensional ZnO nanowires are a promising material system for a wide range of
optoelectronic and photonic applications. Utilization of ZnO, however, requires high-quality …

This paper studies the effect of atomic layer deposition (ALD) temperature on the
performance of top-down ZnO nanowire transistors. Electrical characteristics are presented …

This work reports on the local structure of as-implanted and thermally-treated single Co: ZnO
nanowires studied using a hard X-ray nanoprobe. Although the Co ions are incorporated …