A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its
characterization of ultraviolet radiation is also investigated. On the one hand, when the …

The large surface area of ZnO nanorods makes them attractive for gas and chemical
sensing, and the ability to control their nucleation sites makes them candidates for micro …

The bottom-up approach utilizing one-dimensional semiconducting nanostructures for future
photonic devices becomes one of the most promising methods as it maintains the same …

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were
annealed in air ambient for their conductivity change from conducting to semiconducting …

In this study, we demonstrate the electronic properties of As‐doped homojunction ZnO
nanorods by Kelvin probe force microscopy (KPFM). The self‐assembled undoped/As …

Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but
only a few have focused on the physical properties of a single nanowire since analyzing the …

Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were
fabricated using nanowires grown by site selective molecular-beam epitaxy. When …

A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its
characterization of ultraviolet radiation is also investigated. On the one hand, when the …

Well-crystalline Sn-doped ZnO nanowires were grown on p-type silicon substrates by simple
non-catalytic thermal evaporation process. The prepared nanowires were examined in terms …

Optimised ZnO nanorods characteristics are essential for novel devices to operate efficiently.
The effects of vacuum annealing on the electrical transport properties and defect chemistry …