The electrical properties of field-effect transistors fabricated on the basis of single ZnO
nanorods were analyzed under ambient conditions and in the chamber of a scanning …

We conduct a comprehensive investigation into the electronic and magnetotransport
properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid …

We report on the low-temperature fabrication of field-effect transistors by bridging pre-
patterned electrodes using ZnO nanowires grown in situ, which operate without requiring …

We report on the adjustment of the operation voltage in ZnO nanowire field effect transistors
(FETs) by a simple solvent treatment. We have observed that by submerging ZnO nanowires …

We report on fabrication and electrical characteristics of high-mobility field-effect transistors
(FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were …

The resistivity of ZnO nanowires grown by pulsed laser deposition is found to decrease by
more than two orders of magnitude to 10–1 Ω cm upon doping with aluminum in the 0.6 at …

A single ZnO nanowire with intrinsic oxygen vacancies is utilized to fabricate four-contact
device with focus ion beam lithography technique. Cathodoluminescent spectra indicate …

This study examines the effects of doping ZnO nanowires (NWs) with Sn on the growth
morphology and electrical properties. ZnO NWs with various Sn contents (1–3 at.%) were …

Factors affecting charge transport through ZnO nanowire mat films were studied by aligning
ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire …

Semiconductor nanowires exhibit interesting optical and electronic properties which makes
them useful in device applications. An important advantage of nanowires over other low …