We report the effects of gate bias sweep rate on the electronic characteristics of ZnO
nanowire field-effect transistors (FETs) under different environments. As the device was …

Scanning probe microscopy (SPM) characterizations were performed on nonintentionally
doped n-type ZnO nanopillars (NPs) embedded in a polymer matrix. Transport properties …

Surface diffusion is known to be of prime importance in the growth of semiconductor
nanowires. In this work, we used ZnMgO layers as markers to analyze the growth …

Abstract ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor
deposition method. The NW structure was characterized using transmission electron …

The electrical properties of grain boundaries in technologically relevant oxide thin films are
the subject of both applied and fundamental research. Here we present an investigation of …

ZnO is a wide band gap semiconductor with a direct energy gap, 3.37 eV, at room
temperature [1, 2]. It has an important application in blue-UV light emission and room …

We studied the temperature-dependent electrical transport properties of individual ZnO
nanowires with metal contacts. We used temperature dependent gate response curves to …

Scanning conductance microscopy (SCM) is used to measure the dielectric constant of a
single pencil-like zinc oxide (ZnO) nanowire with the diameters ranging from 85 to 285 nm …

Herein, we report the growth and characterization of Sn-doped ZnO nanowires on silicon
substrate by noncatalytic facile thermal evaporation process. The grown nanowires were …

Through a combination of atomic and electronic structure characterization studies based on
aberration-corrected transmission electron microscopy and varistor property tests, we …