Sensitive and low power generation of phase conjugate beams in the near IR became
possible after the discovery of the photorefractive effect in GaAs and other compound …

We study experimentally the photorefractive gratings decay in semi-insulating germanium
doped cadmium telluride crystals. The estimates for the diffusion length of free carriers LD …

We report the first observation of a photorefractive gain coefficient as high as 2.6 cm− 1 in
the undoped liquid‐encapsulated Czochralski‐grown GaAs crystals at 1.06 μm under a dc …

The simplified band transport model of the photorefractive effect in which the material
responds linearly to local changes in light intensity modulation ratio (fringe contrast) is …

We present photorefractive measurements in undoped GaAs performed at 1.06 pm, 1.32,
xm, and at u” 1.55, um. Using concentrations of EL2 that we determined through optical …

Defect energy levels within the band gaps of semiconductor crystals can strongly influence
electronic and optical properties. While many techniques exist that can characterize and …

We have used a 20-kHz ac square-wave electric field to enhance the beam-coupling gain
and the degenerate four-wave mixing reflectivity of photorefractive GaAs at 1.06 μm. The …

This is the second of two volumes that review, for the first time, all major aspects of
photorefractive effects and their applications. Photorefractive effects in electro-optic crystals …

The strength, formation, and decay of photorefractive and free-carrier gratings written in
GaAs by 43-ps pulses at a wavelength of 1 mu m are investigated using picosecond-time …

We present a new model (including both temperature and electron‐hole effects) of two‐
beam coupling in photorefractive semiconductors under an external dc field E 0. This model …