Steady-state and time-resolved off-Bragg-angle diffraction experiments are used to
determine the structure and the dynamics of photorefractive gratings induced by interband …

We report high-reflectivity four-wave mixing in photorefractive GaAs: Cr crystals at 1.06 μm
using a nearly degenerate interaction with an externally applied dc electric field (moving …

We present a new model, which incorporates both temperature and electron–hole effects, for
two-beam coupling in photorefractive semiconductors under an external dc field E_0. We …

It has been demonstratedI-4 that GaAs is a sensitive photorefractive material with the
potential to be used for optical processing in the infrared region. The advantages of using …

A brief review of a band transport model for the photorefractive effect is given. Distinction is
made between the influence of intrinsic material dependent parameters and externally …

The electromodulation method of photoreflectance (PR) is becoming an important tool for
the characterization of semiconductors, semiconductor interfaces and semiconductor …

In general, the application of an electric field to a photorefractive material with optical activity
results in a change in the effective electro-optic coefficient, r eff, which, in turn, alters the …

We show that photorefractive beam coupling gain as a function of grating period measured
in semi‐insulating GaAs with an external ac electric field or with a dc field and moving …

High-frequency resonances in photorefractive crystals clickable element to expand a topic
LOGIN OR CREATE ACCOUNT PRISM SUBMISSION This website uses cookies to deliver …

A theoretical model of the formation and behavior of holographic gratings in photorefractive
crystals, based on the assumption of two types of active centers being involved and …