AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown
at 570 C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy …

When Ga or Al atoms are evaporated on a clean GaAs surface in an As‐free or a very low As
pressure atmosphere, they are quite mobile and migrate very rapidly along the surface even …

The influence of group V: III flux ratio on the molecular beam epitaxy growth process of
AlGaAs/GaAs quantum wells is studied by means of photoluminescence, using a careful line …

We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-
GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence …

InGaAs/GaAs quantum well structures are grown by a modified MOCVD method, called flow-
rate modulation epitaxy (FME), in which organometals and arsine are alternately fed into a …

Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …

The Al0. 05Ga0. 95As/Al0. 35Ga0. 65As single‐and multiple‐quantum‐well structures with
well widths less than 20 Å have been successfully fabricated by liquid‐phase epitaxy using …

Migration-enhanced epitaxy at relatively high temperatures has been reported to deteriorate
the crystal quality and photoluminescence characteristics of AlGaAs/GaAs heterostructures …

Photoluminescence measurements have been carried out for AlGaAs-GaAs single quantum
well structures grown by molecular beam epitaxy. At both 77 and 4.2 K a few exciton lines …

Photoluminescence measurements have been carried out for GaAs/AlGaAs single quantum
well (SQW) structures grown without interruption by conventional molecular beam epitaxy …