[PDF] researchgate.net

Study of nonradiative recombination centers in GaAs: N δ-doped superlattices structures revealed by below-gap excitation light

MD Haque, N Kamata, AZMT Islam… - 2019 International …, 2019 - ieeexplore.ieee.org
Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattices (SLs) grown by
molecular beam epitaxy (MBE) has been investigated by two-wavelength excited …
被引用次数：1 相关文章 所有 2 个版本
[PDF] researchgate.net

Nonradiative recombination centers in GaAs: N δ-doped superlattice revealed by two-wavelength-excited photoluminescence

D Haque, N Kamata, T Fukuda, Z Honda… - Journal of Applied …, 2018 - pubs.aip.org
We use two-wavelength-excited photoluminescence (PL) to investigate nonradiative
recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structures grown by …
被引用次数：5 相关文章 所有 5 个版本

Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs: N δ-doped superlattice structure

MD Haque, N Kamata, AZMT Islam, Z Honda, S Yagi… - Optical Materials, 2019 - Elsevier
Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structure
grown by metal organic vapor phase epitaxy (MOVPE) are studied by two-wavelength …
被引用次数：4 相关文章 所有 3 个版本
[HTML] aip.org

[HTML][HTML] Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light

MI Hossain, Y Itokazu, S Kuwaba, N Kamata, N Maeda… - AIP Advances, 2020 - pubs.aip.org
Nonradiative recombination (NRR) centers in n-AlGaN layers of UV-B AlGaN samples with
different numbers of superlattice (SL) periods (SLPs), grown on the c-plane sapphire …
被引用次数：1 相关文章 所有 6 个版本
[PDF] researchgate.net

Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

MD Haque, N Kamata, AZMT Islam, S Yagi… - Journal of Electronic …, 2020 - Springer
In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …
被引用次数：4 相关文章 所有 6 个版本
[PDF] sciencedirect.com

Effect of built-in electric field on miniband structure and carrier nonradiative recombination in InGaAs/GaAsP superlattice investigated using photoreflectance and …

T Nakamura, K Matsuochi, H Suzuki, T Ikari… - Energy Procedia, 2016 - Elsevier
We investigated the effect of built-in electric field on miniband formation and carrier
nonradiative recombination in a superlattice structure by using photoreflectance (PR) and …
被引用次数：5 相关文章 所有 4 个版本

Spectroscopy of non-radiative recombination centers in quantum wells by two-wavelength excited photoluminescence

JMZ Ocampo, N Kamata, K Hoshino, K Endoh… - Journal of …, 2000 - Elsevier
Nonradiative recombination centers in Si-doped GaAs/AlxGa1− xAs and GaN/InyGa1− yN
quantum well (QW) structures were studied by the two-wavelength excited …
被引用次数：12 相关文章 所有 7 个版本
[PDF] banglajol.info

Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation: A Mini Review of Two …

N Kamata, AZMT Islam - Rajshahi University Journal of Science and …, 2015 - banglajol.info
We have developed an optical method of detecting and characterizing nonradiative
recombination (NRR) centers without electrical contact. The method combines a below-gap …
被引用次数：1 相关文章 所有 2 个版本

Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence

K Hoshino, JMZ Ocampo, N Kamata, K Yamada… - Physica E: Low …, 2000 - Elsevier
Absence of nonradiative recombination (NRR) centers inside GaAs wells and at GaAs/Al0.
2Ga0. 8As hetero-interfaces in a Si modulation-doped GaAs/Al0. 2Ga0. 8As multiple …
被引用次数：8 相关文章 所有 3 个版本
[PDF] researchgate.net

Fine structure of excitons and eh pairs in GaAs/AlAs superlattices at the X-Γ crossover

NG Romanov, PG Baranov - Nanotechnology, 2001 - iopscience.iop.org
Optically detected magnetic resonance (ODMR) and level anticrossing spectroscopy were
applied to study g-factors and exchange splittings of localized excitons and separately …
被引用次数：8 相关文章 所有 10 个版本