Electroreflectance, photoreflectance, and photoabsorption properties of polycrystalline CdTe thin films prepared by the gradient recrystallization and growth technique

C Vazquez‐Lopez, H Navarro, R Aceves… - Journal of applied …, 1985 - pubs.aip.org
In this work we report e] ectrorefiectance, photoreflectance, and photoabsorption
measurements on CdTe polycrystalline thin films. These thin films were prepared by the …

Correlations between microscopic properties and the photorefractive response for vanadium-doped CdTe

LA De Montmorillon, P Delaye, G Roosen, HB Rjeily… - JOSA B, 1996 - opg.optica.org
We present a summary of the experimental results, the attempts of interpretation at the
present stage, and the conclusions of coupled investigations on semi-insulating, n-type and …

Picosecond photorefractive response of GaAs: EL2, InP: FE, and CdTe: V

GC Valley, J Dubard, AM Glass, AL Smirl - Optics letters, 1989 - opg.optica.org
Measurements and theoretical calculations are presented for the photorefractive effect in
three semi-insulating semiconductors (GaAs: EL2, InP: Fe, and CdTe: V) using 29-psec …

Electron paramagnetic resonance and an optical investigation of photorefractive vanadium-doped CdTe

RN Schwartz, M Ziari, S Trivedi - Physical Review B, 1994 - APS
Electron paramagnetic resonance (EPR), photo-EPR, optical absorption, and
photoluminescence measurements have been made on photorefractive vanadium-doped …

Photorefractive effect at 633 nm in semi‐insulating cadmium sulfide

P Tayebati, J Kumar, S Scott - Applied physics letters, 1991 - pubs.aip.org
We report the first observation of the photorefractive effect in cadmium sulfide at low optical
power. The maximum gain coefficient measured with no applied field at 633 nm is 0.3 cm− 1 …

Hot-carrier enhancement of photorefractive space-charge fields in zinc-blende semiconductors

WA Schroeder, TS Stark, AL Smirl - Optics letters, 1991 - opg.optica.org
Hot-carrier enhancement of photorefractive space-charge fields in zinc-blende semiconductors
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Time-resolved photorefractive four-wave mixing in semiconductor materials

J Strait, AM Glass - JOSA B, 1986 - opg.optica.org
The time responses of the photorefractive effect in semi-insulating InP doped with Fe and
CdTe doped with In are measured. Using microjoule infrared pulses, gratings can be written …

Interpretation of near-band-edge photoreflectance spectra from CdTe

Z Yu, SG Hofer, NC Giles, TH Myers, CJ Summers - Physical Review B, 1995 - APS
A study of the mechanisms underlying the origin of near-band-edge photoreflectance (PR) in
CdTe is reported. We find that multiple transitions, including excitons, must be considered to …

High photorefractive gain at counterpropagating geometry in CdTe:Ge at 1.064 μm and 1.55 μm

K Shcherbin - Applied Optics, 2009 - opg.optica.org
Recording of efficient reflection holograms is achieved in CdTe: Ge at λ= 1.064 μm and λ=
1.55 μm. The gain factor measured at both wavelengths for counterpropagating two-beam …

Characterization and identification of the deep levels in V doped CdTe and their relationship with the photorefractive properties

G Bremond, A Zerrai, G Marrakehi, A Aoudia… - European Materials …, 1995 - Elsevier
Deep level characterization by photoinduced current transient spectroscopy, deep level
transient spectroscopy and deep level optical spectroscopy is presented on vanadium …