The dependence of a two-beam coupling gain on the grating period in Fe-doped InP is
characterized. I measure gains as large as 4 cm^− 1 at 1.06 μm for an applied field of 8 kV …

We report the observation by electron paramagnetic resonance spectroscopy of a new
intrinsic paramagnetic defect in Ge-doped bulk CdTe and ZnCdTe, which we attribute to the …

Rh are the only ones involved in the photorefractive effect at 1.06 μm. In this paper, we apply
this model to the prediction of the steady-state photorefractive space-charge field. We …

Single-pulse and cw measurements of the response of a semi-insulating CdZnTe/ZnTe
multiple-quantum-well photorefractive device are presented. In single-pulse experiments …

A quantitative electron paramagnetic resonance (EPR) study of vanadium-related defects in
semi-insulating and co-doped p-type and n-type bulk CdTe: V shows the V Cd donor to be …

We present results of the first photoreflectance (PR) study in Hg0. 7Cd0. 3Te and MBE and
bulk Cd1− x Zn x Te and the first detailed measurement of the variation of E 1 optical …

Enhanced two-beam mixing amplification at a wavelength of 1.06 μm obtained by using
sinusoidal electrical fields at 7.7 MHz is reported. The peak measured gains are comparable …

We present a new model, which incorporates both temperature and electron–hole effects, for
two-beam coupling in photorefractive semiconductors under an external dc field E_0. We …

In general, the application of an electric field to a photorefractive material with optical activity
results in a change in the effective electro-optic coefficient, r eff, which, in turn, alters the …

The photorefractive characteristics of Ti-doped CdTe semi-insulating crystals were
measured. Additional optical and photoelectric measurement confirmed that titanium has …