Scaling of CMOS technology to nanoscale increases soft error rate in memory cells. Both
single bit upset and Multiple Cell Upsets (MCUs) causes reliability issues in memory …

Memories are always sensitive to soft errors which affect memory reliability. A common
method for protecting memories from soft errors is the use of Error Correcting Codes (ECC) …

As the microelectronics technology continuously scales down, the probability of multiple cell
upsets (MCUs) induced by radiation in memory devices increases. It is required a robust …

The Multi-cell upsets are those upsets affecting multiple cells of a memory, whatever
correction words those cells happen to fall in. These multiple cell upsets (MCUs) have …

Transient multiple cell upsets (MCUs) are becoming major issues in the reliability of
memories exposed to radiation environment. To prevent MCUs from causing data …

This paper presents a method of increasing reliability of memory, so as not to make the data
erroneous, and to make the data free from multiple cell upsets (MCUs). There are many …

The encroachment of technology grading-smaller dimensions, higher consolidation
densities, and lower berth operating voltages-has come to a level that reliability of memory is …

Advancement in Complementary Metal Oxide Semiconductor (CMOS) technology causes
Multiple Cell Upsets (MCUs). Due to the radiation particles, MCUs had been a challenging …

Due to the continuous increment in the integration scale, the fault rate in computer memory
systems has augmented. Thus, the probability of occurrence of Single Cell Upsets (SCUs) or …

As the microelectronics technology continuously advances to deep submicron scales, the
occurrence of Multiple Cell Upset (MCU) induced by radiation in memory devices becomes …