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Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure
diode lasers with an active region made of InAs alloys. The devices were grown by liquid …

We report metal–organic chemical-vapor deposition-grown double heterostructure
InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 μm operating at temperatures up to 220 K …

InAsSb-InAsSbP double heterostructure diode lasers have been grown by metal-organic
chemical vapor deposition on (100) InAs substrates. High-output powers of 660 mW in pulse …

NEW III-V DOUBLE-HETEROJUNCTION LASER EMITTING NEAR 3-2/im :r~~^n_ Page 1
KLEINROCK, L., and TOBAGI, FA : 'Packet switching in radio channels: Part I—carrier sense …

We have observed laser action at λ= 3.06 μm in In0. 77Ga0. 23As0. 74Sb0. 26/InP0. 7Sb0. 3
double heterojunction, diode lasers, which were grown by organometallic vapor‐phase …

The LPE growth of quaternary InAs,,, P, Sb, with x= 02 and y= 009 on InAs substrate has
been studied. This composi-tion is very suitable for the laser and detector applications at …

Double heterostructure wafers composed of p-InAs 0.82 P 0.10 Sb 0.08/n-InAs 0.94 P 0.04
Sb 0.02/n-InAs 0.82 P 0.12 Sb 0.06 were grown on (001) oriented n-InAs substrates by liquid …

Using the metal-organic chemical vapor decomposition technique, light-emitting diodes
based on InAs/InAsSbP double heterostructures emitting in a wavelength range around 3.3 …

Mid-infrared light-emitting diodes (LEDs) operating in the 3.3–4.5 μm wavelength range at
room temperature are produced on the basis of InAsSbP/InAsSb heterostructures. The …