LiTaO 3 samples are implanted with 190KeV He and 110 KeV H with fluences in the range
2× 10 16–6× 10 16 cm− 2 at room temperature. Lattice damage and strain caused by ion …

Blistering and cracking in LiTaO 3 surface are investigated after 200-keV helium ion
implantation and subsequent post-implantation annealing. Rutherford backscattering …

Defects production and evolution in H and He ions co-implanted LiTaO 3 under different
implantation order (H+ He and He+ H) are investigated. Rutherford backscattering …

The effects of He-ion implantation on the surface morphology and transmittance of LiTaO3
single crystals are investigated. The samples were implanted with 250keV He-ion at different …

Z-cut LiTaO 3 single crystal wafers were implanted at room temperature by 100–500 keV He-
ion, to fluences in the range from 1.0× 10 15 to 1.0× 10 17 ions/cm 2. The implanted samples …

The effects of 100 keV H-ion implantation on the structure of LiTaO 3 crystal are investigated
by Raman and UV/VIS/NIR spectroscopies. The implantation fluence is in the range from …

LiTaO3 single-crystals have been implanted by hydrogen or boron mixed with hydrogen
ions. The behavior of ion implantation and annealing has been investigated because they …

The evolution of the microstructure and mechanical properties of low-energy heavy-ion-
irradiated LiTaO 3 crystals annealed at various temperatures was investigated by …

The effect of the different annealing ambients on the regrowth of the Ar ion amorphized
LiTaO3 single crystal was investigated. Samples were amorphized on c+ face by 218 keV Ar …

The defect structure of radiation damage due to irradiation of Ar+ ions and the regrowth of
LiTaO 3 single crystal has been studied using Rutherford backscattering-channeling, cross …