Band alignment of InAs1− xSbx (0.05< x< 0.13)/InAs0. 67P0. 23Sb0. 10 heterostructures
CJ Wu, G Tsai, HH Lin - Applied Physics Letters, 2009 - pubs.aip.org
We determined the unstrained conduction-band and valence-band edge energies of InAs 1−
x Sb x (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P …
x Sb x (0.05< x< 0.13) by fitting the photoluminescence peak energy of InAsSb/InAs 0.67 P …
Calculation of tunable type-II band alignments in InAsxSbyP1− x− y/InAs heterojunctions
K Shim - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
The energy band gaps of the alloy InAs x Sb y P 1− x− y are calculated using the correlated
function expansion (CFE) technique over the entire composition space x and y, for which the …
function expansion (CFE) technique over the entire composition space x and y, for which the …
Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications
Metamorphic heterostructures containing bulk InAs1ÀxSbx layers and AlInAsSb barriers
were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb …
were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb …
MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters
M Heuken, CV Eichel-Streiber, A Behres… - Journal of Electronic …, 1997 - Springer
We investigated the growth of InPSb on GaSb or InAs by low pressure (20 mbar)
metalorganic vapor phase epitaxy (MOVPE). Trimethylindium, triethylantimony, and …
metalorganic vapor phase epitaxy (MOVPE). Trimethylindium, triethylantimony, and …
Theoretical exploration of the optoelectronic properties of InAsNBi/InAs heterostructures for infrared applications: A multi-band k· p approach
We have investigated numerous electronic and optical aspects of the InAsNBi material,
considering a multi-band k· p Hamiltonian. We have scrutinised electronic band dispersion …
considering a multi-band k· p Hamiltonian. We have scrutinised electronic band dispersion …
Study of the valence band offsets between InAs and InAs1-xSbx alloys
EH Steenbergen, OO Cellek… - Quantum Sensing …, 2012 - spiedigitallibrary.org
InAs/InAs 1-x Sb x strain-balanced superlattices (SLs) on GaSb are a viable alternative to
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
VI Vasil'ev, GS Gagis, RV Levin, VI Kuchinskii… - Technical Physics …, 2017 - Springer
A study by secondary-ion mass spectrometry of InAs x P y Sb 1–x–y/InAs heterostructures
(x> 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples …
(x> 0.55) grown by vapor-phase epitaxy for lattice-mismatched with substrates samples …
Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure
W Yongzhen, J Changchun, L Guijin - Journal of crystal growth, 1998 - Elsevier
Quaternary InAsPSb epitaxial layers have been directly grown on InAs substrate without
buffer layer using both the supercooling and step-cooling liquid-phase epitaxy (LPE) …
buffer layer using both the supercooling and step-cooling liquid-phase epitaxy (LPE) …
[HTML][HTML] Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu… - Journal of Applied …, 2015 - pubs.aip.org
The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …