First investigations are reported on the temperature dependence of the dc‐conductivity at
T== 0.05 to 300 K on neutron‐transmutation‐doped (NTD) n‐GaAs in the vicinity of the …

Investigations of anomalous magnetoresistance (mr) in neutron‐transmutation‐doped GaAs
are performed at T= 0.05 to 4.2 K in the vicinity of the metal–insulator transition (MIT) …

Measurements of the temperature dependence of conductivity and magnetoconductivity are
presented of barely metallic n-GaAs bulk crystals doped by the neutron-transmutation …

Variable range hopping conduction in neutron‐transmutation‐doped, isotopically enriched
70Ge: Ga samples for the temperature range T= 20 to 250 mK has been studied in the …

We report on the scaling analysis of low temperature electron transport properties of
nominally uncompensated neutron‐transmutation‐doped 70Ge: Ga samples in the critical …

The hopping conductivity in heavily doped and closely compensated LPE gallium arsenide
is investigated in the temperature range 4.2 to 250 K. It is found that the resistivity in n‐type …

Various concentrations of Ge and Se donors were introduced into GaAs crystals by means of
neutron transmutation doping. Three kinds of GaAs crystals were used: undoped, Cr-doped …

The conductivity of Ge 1− x Au x thin films was studied at temperatures in the range 0.019<
T< 4.2 K. In the linear (low-bias) regime, samples with 0< x< 0.14 showed resistivity with …

We report low-temperature electrical resistivity and magnetoresistivity measurements of
doped semiconductors below the critical concentration of the metal-insulator transition. The …

A model of hopping conduction between nearest neighbors is developed in which the
majority and compensating dopant atoms are assumed to form a unified simple cubic lattice …