L Beji, L Sfaxi, H Benouada,
H Maaref - physica status solidi (a), 2005 - Wiley Online Library
The electrochemical etching of n+‐type GaAs in a hydrofluoric acid (HF) solution results in
the formation of a porous layer. The current–potential characteristic I (V) of the n+‐type GaAs …