Graphene has been predicted to play a role in post-silicon electronics due to the
extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals …

Good quality, complementary-metal-oxide-semiconductor (CMOS) technology compatible,
200 mm graphene was obtained on Ge (001)/Si (001) wafers in this work. Chemical vapor …

Among the many anticipated applications of graphene, some–such as transistors for Si
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common
commercial semiconductor, is of paramount significance for many technological …

By forming an ultrathin (∼ 100 nm) SiC film on Si substrates and by annealing it at∼ 1500 K
in vacuo, few-layer graphene is formed on Si substrates. Graphene grows on three major …

Direct growth of graphene integrated into electronic devices is highly desirable but difficult
due to the nominal~ 1000° C chemical vapor deposition (CVD) temperature, which can …

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-
compatible processes. For future application in next generation devices the accurate control …

The successful integration of graphene into microelectronic devices is strongly dependent
on the availability of direct deposition processes, which can provide uniform, large area and …

Graphene has been introduced to the electronics community as a potentially useful material
for scaling electronic devices to meet low-power and high-performance targets set by the …

Direct formation of high-quality and wafer scale graphene thin layers on insulating gate
dielectrics such as SiO2 is emergent for graphene electronics using Si-wafer compatible …