Design of a Compact Power Amplifier with 18.6 dBm 60 GHz 20.5% PAE in 22 nm FD-SOI
This paper presents the design of a 60 GHz power amplifier (PA) in a 22 nm FD-SOI CMOS
technology. To improve the performance at millimeter-wave frequencies by minimizing the …
technology. To improve the performance at millimeter-wave frequencies by minimizing the …
A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI
This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
A 21-39.5 GHz power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain broadband power amplifier for 5G wireless systems, which
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
provides a gain above 10 dB from 21 GHz to 39.5 GHz, and is implemented in a 22 nm FD …
One stage gain boosted power driver at 184 GHz in 28 nm FD-SOI CMOS
S Sadlo, M De Matos, A Cathelin… - 2021 IEEE Radio …, 2021 - ieeexplore.ieee.org
In order to improve amplifiers' power gain for a close to f_max operation, a methodology to
size the embedding of any active two port is described and then applied to the design of a …
size the embedding of any active two port is described and then applied to the design of a …
An area efficient 48-62 ghz stacked power amplifier in 22nm fd-soi
This paper presents a millimeter wave power amplifier (PA) implemented in 22nm FD-SOI
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
technology with only 0.8 V transistors. The single stage pseudo-differential 3-level stacked …
A Performance Study of 22nm FDSOI CMOS for Wideband 5G Power Amplifier Applications
QH Le, DK Huynh, A Nayak, T Kämpfe… - 2022 14th German …, 2022 - ieeexplore.ieee.org
This paper presents a performance study of the 22nm FDSOI transistor through the design
and simulation of a wideband two-stage power amplifier (PA). The PA design flow includes …
and simulation of a wideband two-stage power amplifier (PA). The PA design flow includes …
A 28GHz, asymmetrical, modified doherty power amplifier, in 22nm FDSOI CMOS
N Elsayed, H Saleh, B Mohammad… - … on Circuits and …, 2020 - ieeexplore.ieee.org
A 28GHz, Modified Doherty Power Amplifier (MDPA) was implemented in 22nm FDSOI
CMOS technology from GF. The MDPA adopts an asymmetrical topology utilizing two …
CMOS technology from GF. The MDPA adopts an asymmetrical topology utilizing two …
A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
A 26GHz 22.2 DBM Variable Gain Power Amplifier in 28NM FD-SOI CMOS for 5G Antenna Arrays
C Elgaard, A Axholt, E Westesson… - 2018 Asia-Pacific …, 2018 - ieeexplore.ieee.org
A 26 GHz power amplifier (PA) targeting millimeter wave 5G mobile systems is presented.
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
The two stage PA, integrated in a complete transmitter in a 28 nm FD-SOI CMOS process …
A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
F Torres, E Kerhervé, A Cathelin… - International Journal of …, 2021 - cambridge.org
This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …