A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS
Y Zhang, P Reynaert - 2017 IEEE Radio Frequency Integrated …, 2017 - ieeexplore.ieee.org
This paper presents a high-efficiency, linear power amplifier (PA) for 28GHz mobile
communications in 40nm CMOS technology. The design and layout are optimized for high …
communications in 40nm CMOS technology. The design and layout are optimized for high …
A 1.2 V 20 dBm 60 GHz power amplifier with 32.4 dB gain and 20% peak PAE in 65nm CMOS
A Larie, E Kerhervé, B Martineau… - ESSCIRC 2014-40th …, 2014 - ieeexplore.ieee.org
A 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power (LP)
CMOS technology. The structure consists of four common-source pseudo-differential stages …
CMOS technology. The structure consists of four common-source pseudo-differential stages …
A 14.8 dBm 20.3 dB power amplifier for D-band applications in 40 nm CMOS
D Simic, P Reynaert - 2018 IEEE Radio Frequency Integrated …, 2018 - ieeexplore.ieee.org
This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
CMOS technology for D-band applications. Two-way transformer-based power-combining is …
A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications
In recent years, there has been tremendous interest in trying to implement the power
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
amplifier in CMOS, due to its cost and integration benefits. Most of the high power (watt …
An integrated 33.5 dBm linear 2.4 GHz power amplifier in 65nm CMOS for WLAN applications
An integrated linear 2.4 GHz CMOS power amplifier is presented. With a 3.3 v supply, the PA
produces a saturated output power of 33.5 dBm with peak drain and power-added …
produces a saturated output power of 33.5 dBm with peak drain and power-added …
A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS
This paper presents the first linear bulk CMOS power amplifier (PA) targeting low-power fifth-
generation (5G) mobile user equipment integrated phased array transceivers. The output …
generation (5G) mobile user equipment integrated phased array transceivers. The output …
A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …
13.9 A 1.1 V 28.6 dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE
A Passamani, D Ponton, E Thaller… - … solid-state circuits …, 2017 - ieeexplore.ieee.org
In today's connected world, smaller and leaner wireless applications emerge, calling for
increasingly higher integration and smaller footprint, while ensuring high reliability and …
increasingly higher integration and smaller footprint, while ensuring high reliability and …
A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS
We present a 101-117GHz power amplifier (PA) using two way current power combiner in
65nm bulk CMOS. It delivers up to 14.8 dBm saturated output power with over 14dB power …
65nm bulk CMOS. It delivers up to 14.8 dBm saturated output power with over 14dB power …
A 25 Gb/s 60 GHz digital power amplifier in 28nm CMOS
This paper presents a 60 GHz class-E digital power amplifier (DPA) that generates energy-
efficient, non-constant envelope modulations up to 25 Gb/s. The DPA achieves a peak drain …
efficient, non-constant envelope modulations up to 25 Gb/s. The DPA achieves a peak drain …