CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by
transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the …

This letter presents studies of several simple integrated circuits—n-channel metal-oxide
semiconductor inverters, five-stage ring oscillators, and differential amplifiers—formed on …

This paper discusses in detail the design and fabrication process for the realization of high-
performance polycrystalline silicon thin-film transistors and digital CMOS circuitry on thin …

This letter describes the fabrication and properties of bendable single-crystal-silicon thin film
transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon …

Amorphous silicon field-effect transistors (a-Si FET's) have been integrated into eleven-
stage ring oscillators. The inverter consists of an n-channel driver a-Si FET and an n+ a-Si …

A CMOS inverter having a single gate for both n and p channel devices has been fabricated
using bulk silicon for the p channel device and a laser-recrystallized silicon film for the n …

A one-pin crystal oscillator with an integrated load capacitance of 15 pF has been realized in
a standard 0.35-/spl mu/m CMOS technology. Due to the structure of the oscillator and the …

We fabricated CMOS circuits from polycrystalline silicon films on steel foil substrates at
process temperatures up to 950/spl deg/C. The substrates were 0.2-mm thick steel foil …

Results are presented on the performance of low-temperature, short-channel polycrystalline
silicon (poly-Si) thin-film transistors (TFTs), with channel length down to 0.5 μm, and scaled …

An integrated-circuit (IC) fabrication process has been used to construct small-geometry
MOS transistors and a ring oscillator with the active transistor channels in a thin layer of …