High-power generation for mm-wave 5G power amplifiers in deep submicrometer planar and FinFET bulk CMOS
A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …
A 26 dBm 39 GHz Power Amplifier with 26.6% PAE for 5G Applications in 28nm bulk CMOS
Continued demand for 5G cellular connectivity in mobile handheld devices, where antenna
real-estate is at a premium, necessitates high output power from individual transmitter …
real-estate is at a premium, necessitates high output power from individual transmitter …
Large-scale power combining and mixed-signal linearizing architectures for watt-class mmWave CMOS power amplifiers
R Bhat, A Chakrabarti… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Millimeter wave (mmWave) CMOS power amplifiers (PAs) have traditionally been limited in
output power due to the low breakdown voltage of scaled CMOS technologies and poor …
output power due to the low breakdown voltage of scaled CMOS technologies and poor …
Large-scale power-combining and linearization in watt-class mmWave CMOS power amplifiers
R Bhat, A Chakrabarti… - 2013 IEEE Radio …, 2013 - ieeexplore.ieee.org
Switching-class PAs employing device-stacking have been recently explored to meet the
challenge of efficient power amplification at mmWave frequencies at moderate power levels …
challenge of efficient power amplification at mmWave frequencies at moderate power levels …
High power, high efficiency stacked mmWave Class-E-like power amplifiers in 45nm SOI CMOS
A Chakrabarti, H Krishnaswamy - Proceedings of the IEEE …, 2012 - ieeexplore.ieee.org
Stacking devices in CMOS power amplifiers (PAs) increases the achievable output voltage
swing, thereby increasing the output power and efficiency, particularly at millimeter-wave …
swing, thereby increasing the output power and efficiency, particularly at millimeter-wave …
Broadband high-efficiency millimeter-wave power amplifiers in 22-nm CMOS FD-SOI with fixed and adaptive biasing
JTTU Mayeda, CTTU Sweeney, DYC Lie, JTTU Lopez - 2022 - ttu-ir.tdl.org
The design of broadband highly-efficient millimeter-wave (mm-Wave) Power Amplifiers (PA)
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …
High-efficiency E-band power amplifiers and transmitter using gate capacitance linearization in a 65-nm CMOS process
This brief presents a new design technique for high-efficiency CMOS millimeter-wave power
amplifiers (PAs) and the implementations of a two-stage moderate-power PA, a three-stage …
amplifiers (PAs) and the implementations of a two-stage moderate-power PA, a three-stage …
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
A 40–67 GHz Power Amplifier With 13 dBm and 16% PAE in 28 nm CMOS LP
M Bassi, J Zhao, A Bevilacqua… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Pushed by the availability of large fractional bandwidths, many well-established applications
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …
Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …
wave 5G systems, along with a comparison of the potential of different semiconductor …