Low-bandgap, lattice-mismatched Ga x In 1− x As (GaInAs) grown using InAs y P 1− y
(InAsP) compositional-step grades on InP is a primary choice for lightabsorbing, active …

Salient advances in the development of thermophotovoltaic (TPV) energy converters based
on low‐bandgap, InP‐based, GaInAs/InAsP heterostructures are presented and discussed …

X-ray absorption fine-structure techniques have been utilized to probe the short-range
structures around N and In in In x Ga 1− x As 1− y N y compounds containing about 3% of N …

In this work we report on transmission electron microscopy and high‐resolution x‐ray
diffractometry studies of lattice matched Al x In1− x As/InP and Ga y In1− y As/InP epilayers …

Recent progress in the development of high-performance, 0.6-eV Ga 0.32 In 0.68 As/InAs
0.32 P 0.68 thermophotovoltaic (TPV) converters and monolithically interconnected modules …

We have investigated thermophotovoltaic monolithic interconnected modules fabricated
from In0. 68Ga0. 32As on InP using In (PAs) buffer layers to mitigate the lattice mismatch …

Abstract In 0.53 Ga 0.47 As epitaxial films are grown on 2-inch diameter Si (111) substrates
by growing a low-temperature In 0.4 Ga 0.6 As buffer layer using molecular beam epitaxy …

High-quality, thin-film, lattice-matched (LM) InAs y P 1− y/In x Ga 1− x As double
heterostructures (DHs) have been grown lattice mismatched on InP substrates using …

Abstract In 1− x Ga x As/In 1− y Al y As quantum wells (QW's) and In 1− y Al y As layers
slightly lattice mismatched to InP substrates are grown by metalorganic chemical-vapor …

The application of an In0. 7Al0. 3As window layer material on the properties of lattice-
mismatched (LMM) single-junction (SJ) In0. 69Ga0. 31As thermophotovoltaic (TPV) cells …