<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …

Stacking devices in CMOS power amplifiers (PAs) increases the achievable output voltage
swing, thereby increasing the output power and efficiency, particularly at millimeter-wave …

Millimeter wave (mmWave) CMOS power amplifiers (PAs) have traditionally been limited in
output power due to the low breakdown voltage of scaled CMOS technologies and poor …

To increase the voltage handling capability of scaled CMOS-based circuits, series
connection (stacking) of transistors has been demonstrated in recently reported mm-wave …

The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs)
implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB …

A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …

Switching-class PAs employing device-stacking have been recently explored to meet the
challenge of efficient power amplification at mmWave frequencies at moderate power levels …

A review is presented of the key techniques for high-power, high-efficiency millimeter-Wave
(mm-Wave) 5G power amplifier (PA) design in deep submicrometer planar and FinFET bulk …

Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are
studied with a focus on design of appropriate complex impedances between the transistors …

The paper presents an mm-Wave load modulated balanced amplifier (LMBA) architecture
across 30–40 GHz. The architecture is implemented with a transformer-based hybrid at input …