This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …

This paper reports on the formation and characterization of Ohmic contacts to n-type and p-
type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior …

The formation of low resistivity ohmic contacts to p-type 4H–SiC is achieved. Transfer length
method (TLM)-based structures were fabricated on 0.8 µm thick epitaxial p-type silicon …

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type
implanted silicon carbide (4H-SiC) were studied employing different techniques. With …

For more than three decades, SiC has been investigated as a wide band gap
semiconductor. This paper reviews ohmic and rectifying metal contacts on n-and p-type α …

The structural and electrical characterisation of nickel contacts on n-type silicon carbide was
performed to improve the ohmic behaviour at high temperatures. The formation of nickel …

This paper presents the structural, chemical and electronic properties of Al/Ni/Al-layers
evaporated on 4H silicon carbide and then annealed at 1000° C for 5 min. The structure was …

The properties of SiC have great potential for high temperature electronic device
applications. For the realization of these devices the formation of stable (at elevated …

Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …

Abstract Ni (50 nm)/Ti (10 nm) and Ni (50 nm) contact structures were deposited by vacuum
evaporation on n-type 6H–SiC with various doping level. Prior to deposition, part of the …