A method of manufacturing a double magnetic tunnel junction device is provided. The
method includes forming a first magnetic tunnel junction stack. The first magnetic tunnel …

US9142762B1 - Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
- Google Patents US9142762B1 - Magnetic tunnel junction and method for fabricating a …

A magnetic tunnel junction includes a first magnetic layer, a tunnel insulating layer and a
second magnetic layer. The first magnetic layer is formed on a substrate. The tunnel …

A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a plurality of sidewalls and a bottom wall. The …

A method of forming a magnetic tunnel junction device is disclosed that includes forming a
trench in a substrate, the trench including a first sidewall, a second sidewall, a third sidewall …

An improved magnetic tunnel junction device and methods for fabricating the improved
magnetic tunnel junction device are provided. The provided two-etch process reduces …

A method of manufacturing a double magnetic tunnel junction device is provided. The
method includes forming a first magnetic tunnel junction stack, forming a spin conducting …

Double magnetic tunnel junctions and methods of forming the same include a bottom
reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is …

A method of forming a magnetic tunnel junction (MTJ) device includes forming a first MTJ
cap layer on a MTJ structure. The first MTJ cap layer includes a first non-nitrified metal. The …

A method of manufacturing a double magnetic tunnel junction device includes forming a first
magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel …