The formation of Ohmic contacts to n-type 4H-SiC layers at low annealing temperature using
dopant segregation technique is reported. n-SiC epilayer was implanted with phosphorous …

In this study, the dependence of nickel contacts to n-type 3C-SiC on anneal temperature is
characterized by the linear transmission line method. It is found that Ni contacts begin to …

Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this
paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in …

The analysis of Ti/Ni metal-layer as Ohmic and Schottky contacts to 4H n-SiC (with a doping
concentration of~ 1E18 cm-3) is reported. Both Ti (10nm/Ni (100nm) contact and Ti …

In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-
SiC are investigated. The Ni/n-SiC ohmic contact with resistance rc~ 4.2× 10-4 Ω cm2 is …

There is still little consensus regarding why low contact resistivity is achieved when Ni on n-
type 4H-and 6H-SiC is annealed at temperatures of more than above 950° C. The objective …

Silicon carbide, due to its unique properties, is a material with a high application potential for
development of high power, high frequency and high temperature electronic devices …

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron
sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and …

Ohmic contacts to p-type 4H-and 6H-SiC have been obtained using Ni, Ni/W, Al/Ni, and
Al/Ni/W metallization systems after annealing at 850-1050 C for 2-5 minutes. Post-anneal X …

Abstract Effects of reducing annealing temperature on a technique for the simultaneous
formation of Ni/Al ohmic contacts exhibiting ohmic behavior to both n-and p-type SiC were …