We report the first hybrid mode-locking of a monolithic two-section multiple quantum well
InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μmlong absorber …

Passive mode-locked pulses with repetition frequencies in the range 40 to 90 GHz were
observed in blue-violet GaN-based quantum-well lasers without external cavities. The lasers …

We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521-528 nm)
laser diode by employing a self-injection locking scheme that is based on an external cavity …

We present the investigation of an optimized epitaxial layer structure in order to reach high
optical output powers of several watts. The influence of an interlayer, which is located …

A violet InGaN multi-quantum well/GaN/AlGaN separate-confinement-heterostructure laser
diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The threshold …

We report, to the best of our knowledge, the first employment of a self-injection locking
scheme for the demonstration of a tunable InGaN/GaN semiconductor laser diode. We have …

The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs)
was demonstrated at room temperature with a lifetime of 24–40 min. The threshold current …

The continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes
(LDs) was demonstrated at room temperature (RT) with a lifetime of 27 h. The threshold …

A multi-striped InGaN-based laser diode (LD) array is demonstrated at a high power of 6.3 W
under continuous wave operation. The world highest power operation as InGaN LD array is …

The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an
epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities …