Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are
predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and …

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are
predominantly made using III–V semiconductor compounds such as GaAs, InP, GaN, and …

The crystalline and electronic structures of semiconductors reflect a delicate balance of very
large electromagnetic forces, and consequently minute compositional variations or small …

Optoelectronic devices have received great attention in recent years, as they are key
components of the Internet and other optical communication systems. Other breakthrough …

'This book is more suited for researchers already familiar with WBS who are interested in
developing new WBG materials and devices since it provides the latest developments in …

Semiconductor optical components have been subject to intense research efforts in recent
years. These efforts have become apparent with the introduction of GaAs laser diodes for …

This paper discusses material/device and fabrication problems related to the high-power
performance of fundamental-mode GaAs/AlGaAs and InGaAs/AlGaAs laser diodes. Various …

As the optoelectronics market continues to grow at 20%–40% per year in many segments,
many new practitioners join the field, without the benefit of the traditional graduate school …

Bandgap engineering is a powerful technique for the design of new semiconductor materials
and devices. Heterojunctions and modern growth techniques, such as molecular beam …

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …