抄録 600nm 帯可視光半導体レーザーの研究開発は, ここ数年, かつてなかった急速な進展を遂げ
つつある. 歴史的課題であった素子の寿命も, 発振波長 678nm のレーザーにおいて, 室温で 4000 …

The device characteristics of 680nm-band gain-gui di ng A1GaInP i on-impl anted stripe
doubleheterostructure I asers with a GaInP active T ayer are presented. A narrow stri pe …

InGaAsP/InGaAsP double-heterostructure laser diodes with wavelength as short as 621.4
nm at room temperature were demonstrated and their growth conditions were described …

Publisher Summary This chapter reviews InGaAsP/InP laser structures and their
performance characteristics. The choice of a laser structure for a given application is …

InGaAsP crystal is proposed as a new visible laser material. Two advantages, ie no
aluminum and the large tetragonal distortion, are expected to be effective for the realization …

抄録 Present status of InGaAsP/InP injection lasers emitting at Wavelengths of 1_?? _1. 6μm
is described. The double-heterostructure crystals were grown by LPE or by CVD techniques …

Room-temperature cw operation for InGaP IInGaAlP double heterostructure (DH) laser
diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by …

Two quaternary Ill-V systems are available for InP based opto and micro-electronics:
InGaAsP and InGaAlAs. The first has been extensively studied with remarkable success for …

Pulsed laser operation of the InGaAsP/InGaP double heterostructure, which was grown on
GaAs for the first time by metalorganic chemical vapor deposition, was achieved in the …

This paper reviews the recent resulis for our transverse-mode stabilized InGaAltP visibite
semiconductor lasers. From the material viewpoint, InGaA1P/InGaP heterostructure has …