This paper presents a tool based on a two dimensional charge-collection simulation to study
non-destructive single event effects in CMOS IC blocks. The interaction between the …

A new analytical modelling approach to evaluate the impact of single event transients
(SETs) on CMOS circuits has been developed. The model allows evaluation of transient …

The single event transients (SETs) are a common source of malfunction in nano-scale
CMOS integrated circuits. For this reason, evaluation of the SET effects and application of …

A simple macro-model to accurately simulate upset error on CMOS devices is presented.
This macro-model can accurately simulate the typical behavior of single event effect (SEE) …

The generation and the propagation of radiation induced single event transients (SET) in
CMOS circuits are evaluated. An accurate and computer efficient analytical model for SET …

We present design aims and implementation results of a digital ASIC that is dedicated as a
target for radiation experiments. Accordingly, it carries different target circuit blocks whose …

This paper proposes a methodology to design radiation-hardened ICs, suitable for space
applications and high-energy physics experiments. The miniaturization of ICs has brought …

Using transient 3D simulations we investigated single event latchups in SRAMs caused by
cosmic radiation. The device structure considered comprises n-well, p-substrate, and source …

An accurate and computer efficient analytical model for the evaluation of integrated circuit
sensitivity to radiation induced single event transients is presented. The key idea of the work …

As the demand for complex functions to be performed in harsh environments such as space
applications converges with continually diminishing IC feature sizes, the traditional methods …