Growth and characterization results are presented for high-power laser diodes with AlGaAs
cladding and waveguide layers and strained In 1-x Ga x As quantum wells with 0.09< x< …

Diode lasers with a strained AlInGaAs active layer and AlGaAs confining and cladding
layers are reported. Broad-stripe devices were fabricated in graded-index separate …

The effect of variation of the number of highly strained InGaAs quantum wells embedded in
GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was …

GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …

The effect of a growth interruption at the interfaces of the AlGaAs/InGaAs/GaAs quantum well
(QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm …

Strained InGaAs/AlGaAs quantum well (QW) lasers operating at 0.98 micrometers are
currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers …

Data are presented on laser threshold current density and emission wavelength of strained‐
layer InGaAs‐GaAs‐Al x Ga1− x As single quantum well lasers having confining layer …

Strained InGaAs quantum well (QW) lasers have been used to extend the lasing wavelength
of quantum well lasers from~ 0.9 out to nearly 1.1 μm. The structures reported here are …

A large increase in differential quantum efficiency from 35% to> 45% per facet is obtained
using a GaInAsP alloy (Es--1.65 eV), instead of GaAs, for the optical confinement layers in …

InGaAs/AlGaAs SQW and DQW broad waveguide separate confinement laser
heterostructures with carbon p-doping have been investigated. For this purpose carbon …