As CMOS technology size scales down, multiple cell upsets (MCUs) caused by a single
radiation particle have become one of the most challenging reliability issues for memories …

In recent years, there has been a growing interest in multi-bit error correction codes (ECCs)
to protect SRAM memories. This has been caused by the increased number of multiple …

Error correction codes (ECCs) are commonly used to protect memories from errors. As
multibit errors become more frequent, single error correction codes are not enough and …

Radiation-induced soft errors are a major reliability concern for memories. To ensure that
memory contents are not corrupted, single error correction double error detection (SEC …

As multiple cell upsets (MCUs) become more frequent on SRAM memory devices, there is a
growing interest on error correction codes that can correct multibit errors. Orthogonal Latin …

Memories are commonly protected with error correction codes to avoid data corruption when
a soft error occurs. Traditionally, per-word single error correction (SEC) codes are used. This …

Soft errors have been a concern in memories for many years. In older technologies, soft
errors typically affected a single memory cell but as technology scaled, Multiple Cell Upsets …

Radiation effects cause several types of errors on memories including single event upsets
(SEUs) or single event functional interrupts (SEFIs). Error correction codes (ECCs) are …

Error-correcting codes (ECCs) are commonly used to protect static RAM (SRAM) from soft
errors induced by particle radiation. The traditional single-error correction, double-error …

Error correction codes (ECCs) are commonly used to protect memories against errors.
Among ECCs, orthogonal latin squares (OLS) codes have gained renewed interest for …