A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 μm
InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold …

We used metalorganic chemical vapor deposition to fabricate a planar-embedded InGaAsP I
lnP heterostructure laser with a semi-insulating InP current-blocking layer. The laser exhibits …

A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which
uses a semi-insulating InP base structure current confinement layer formed by OMVPE …

Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-
phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially …

InGaAsP IlnP buried-heterostructure lasers with a stripe width of 1-2, um have been
fabricated by two-step liquid phase epitaxy and preferential chemical etching. They operate …

A V-grooved substrate buried-heterostructure laser emitting at 1.3? m wavelength is
described. The active layer is buried in the V-shaped groove. A CW threshold current of 10 …

Low threshold InGaAsP/InP lasers with planar buried heterostructure were grown entirely by
low‐pressure metalorganic chemical vapor deposition (MOCVD). The threshold current I th …

InGaAsP/InP planar buried heterostructure (BH) lasers with semi-insulating current blocking
layers have been realized using LPE and MOCVD hybrid growth. The planar structure has …

InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser ×
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The fabrication and performance characteristics of a InGaAsP laser structure with semi‐
insulating current confining layers are reported. The semi‐insulating layers are Fe‐doped …