Scanning capacitance microscopy (SCM) has been investigated on Ga doped ZnO staircase
multi‐layers grown by molecular beam epitaxy (MBE) and ZnO NWs grown by chemical bath …

Cross-sectional scanning capacitance microscopy (SCM) was performed on n-type ZnO
multi-layer structures homoepitaxially grown by molecular beam epitaxy method. Highly …

Single ZnO nanowires are configured as field effect transistors and their electrical properties
are characterized using scanning probe microscopy (SPM). Scanning surface potential …

The carrier density of ZnO nanowires has been determined by means of electrochemical
impedance spectroscopy. A model taking into account the geometry of ZnO nanowires has …

ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …

An overview of the electrodeposition of ZnO nanowire arrays from the reduction of dissolved
molecular oxygen in zinc chloride solutions was reported. In spite of the internal structure of …

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

In this article, the important role of the intrinsic defects in size-controlled ZnO nanowires
(NWs) which play a critical role in the properties of the NWs, was studied with a combined …

In situ electrical transport measurements on individual bent ZnO nanowires have been
performed inside a high-resolution transmission electron microscope, where the crystal …

The electrical properties of single ZnO nanowires grown by vapor phase transport were
investigated. While some samples were contacted by Ti/Au electrodes, another set of …