We present data and calculations and examine the factors that determine the detectivities in
self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We …

We discuss key issues related to quantum dot infrared photodetectors. These are the normal
incidence response, the dark current, and the responsivity and detectivity. It is argued that …

We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …

Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

In this contribution we present a normal-incidence quantum dot (QD) infrared detector
structure. It is based on intra-conduction band transitions between the p-states of the QD and …

We report on the analysis of thermally-limited operation of quantum-dot infrared
photodetectors (QDIPs). A device model is developed and used to calculate the QDIP …

Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum
wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were …

In this paper we report studies on normal incidence, InAs/In0. 15Ga0. 85As quantum dot
infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP …

The physical properties of detectors based on intraband optical absorption in quantum dots
is described and examined in the interest of providing a competitive alternative infrared (IR) …

In this letter, we present a normal-incident quantum-dot infrared photodetector. The
detection principle is based on intersubband transition between the p states and the wetting …