Investigation of the optical and electrical properties of p-type porous GaAs structure
H Saghrouni, A Missaoui, R Hannachi, L Beji - Superlattices and …, 2013 - Elsevier
Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …
doped p-type GaAs substrate in a HF: C 2 H 5 OH solution. The surface morphology of …
Morphology and optical properties of p-type porous GaAs (1 0 0) layers made by electrochemical etching
SB Khalifa, B Gruzza, C Robert-Goumet… - Journal of …, 2008 - Elsevier
Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …
substrates in HF solution. A surface characterization has been performed on p-type GaAs …
Nanostructurale nature of the porous GaAs layer formed on p+-GaAs substrate by electrochemical anodization
A porous GaAs layer has been formed by electrochemical anodization in HF based solution
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …
on extremely doped p-type GaAs substrate. Porous nature of the elaborated sample has …
[PDF][PDF] Effects of growth conditions on structural and optical properties of porous GaAs layers
Z Harrabi, L Beji, N Chehata, A Ltaief, H Mejri… - J. Nano. Adv …, 2014 - researchgate.net
Porous GaAs was prepared using electrochemical anodization technique of a cristalline
GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions …
GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions …
Optical properties of p-type porous GaAs
VV Kidalov, L Beji, GA Sukach - … Physics Quantum Electronics …, 2005 - dspace.nbuv.gov.ua
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100)
oriented p-type GaAs. The formation of porous structure has been confirmed by Raman …
oriented p-type GaAs. The formation of porous structure has been confirmed by Raman …
Structural and luminescent characteristics of porous GaAs
A Lebib, EB Amara, L Beji - Journal of Luminescence, 2017 - Elsevier
In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …
Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution
L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen… - Microelectronics …, 2003 - Elsevier
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the …
Structural and optical properties of vapor-etched porous GaAs
This paper consists to present first results concerning the structure of porous GaAs layer (por-
GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In …
GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In …
Porous layers on compensated GaAs: Cr
A S̆imkien, J Sabataityt, V Karpus, GJ Babonas… - Materials Science and …, 2003 - Elsevier
Porous multi-layered structures on GaAs: Cr (001) were formed by anodic etching in HF acid
based electrolyte. The top layer with a thickness of 0.5–1.5 μm consists mainly of As-and Ga …
based electrolyte. The top layer with a thickness of 0.5–1.5 μm consists mainly of As-and Ga …
Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs
We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …