Contribution of inter-valley scattering in governing the steady state optical spin orientation in Al x Ga1− x As
The impact of inter-valley scattering in modifying the density of optically injected spin
polarized electrons in Al x Ga 1− x As/GaAs heterostructure is investigated. Polarization …
polarized electrons in Al x Ga 1− x As/GaAs heterostructure is investigated. Polarization …
Detection of optically injected spin polarized electrons in the L-valley of AlGaAs through polarization resolved photoluminescence excitation spectroscopy
GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …
Full-zone optical spin injection in AlxGa1− xAs alloys
Full-zone optical spin injection in Al x Ga 1− x As alloys is investigated by analyzing the
degree of circular polarization (DCP) of luminescence in a quantum well architecture …
degree of circular polarization (DCP) of luminescence in a quantum well architecture …
Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
P Mudi, SK Khamari, J Bhattacharya… - arXiv preprint arXiv …, 2021 - arxiv.org
GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin
relaxation in the satellite X-valley of indirect band gap Al0. 63Ga0. 37As epitaxial layers …
relaxation in the satellite X-valley of indirect band gap Al0. 63Ga0. 37As epitaxial layers …
Signature of linear-in- Dresselhaus splitting in the spin relaxation of -valley electrons in indirect band gap AlGaAs
The GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin
relaxation in the satellite X valley of indirect band gap Al 0.63 Ga 0.37 As epitaxial layers …
relaxation in the satellite X valley of indirect band gap Al 0.63 Ga 0.37 As epitaxial layers …
Decoherence-assisted initialization of a resident hole spin polarization in a -doped semiconductor quantum well
M Kugler, K Korzekwa, P Machnikowski, C Gradl… - Physical Review B …, 2011 - APS
We investigate spin dynamics of resident holes in ap-modulation-doped GaAs/Al 0.3 Ga 0.7
As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin …
As single quantum well. Time-resolved Faraday and Kerr rotation, as well as resonant spin …
Spin dynamics and magnetic field induced polarization of excitons in ultrathin GaAs/AlAs quantum wells with indirect band gap and type-II band alignment
The exciton spin dynamics are investigated both experimentally and theoretically in two-
monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band …
monolayer-thick GaAs/AlAs quantum wells with an indirect band gap and a type-II band …
Dynamics of dense spin ensemble excited in a barrier layer and detected in a well
C Shen, LG Wang, H Zhu, HZ Zheng - Science China Physics, Mechanics …, 2011 - Springer
Photoluminescence (PL) polarization of a spin ensemble was examined over a wide
excitation wavelength range from 520 nm to 700 nm and a temperature range from 3.5 K to …
excitation wavelength range from 520 nm to 700 nm and a temperature range from 3.5 K to …
Negative spin polarization in AlGaAs photoluminescence
AM Gilinsky, A Winter, C Mejía‐García… - … status solidi c, 2008 - Wiley Online Library
Optical orientation of carrier spins has been studied in pure direct‐gap AlxGa1–xAs alloys (x
up to 15%). It is shown that optical excitation with circularly‐polarized light with quanta …
up to 15%). It is shown that optical excitation with circularly‐polarized light with quanta …
Spin phenomena in asymmetrical [0 0 1] GaAs/Alx Ga1− x As quantum wells
P Tronc - Semiconductor Science and Technology, 2012 - iopscience.iop.org
Abstract Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in
asymmetrical [0 0 1] GaAs/Al x Ga 1− x As quantum wells by means of Hanle effect, ie with a …
asymmetrical [0 0 1] GaAs/Al x Ga 1− x As quantum wells by means of Hanle effect, ie with a …