In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, Al x Ga 1− x
As/GaAs structures (0< x< 0.7) have been grown on 2 inch wafers. X-ray and low …

This paper reports on the large area growth of GaInAsP/InP structures for 1.3 and 1.55 μm
applications in a LP-MOVPE system at 20 mbar, at conditions comparable to those used for …

InGaAs/InP strained-layer MQW lasers are theoretically predicted to exhibit enhanced
performance over lattice matched MQW lasers as a result of the strain-induced reduction of …

Layer structures comprising InP and InGaAsP were compared when grown using nitrogen
versus hydrogen as carrier gas. Under nitrogen a remarkable improvement in layer …

Selective are controls of carrier concentrations in GaAs and alloy compositions in AlGaAs
have been studied by selectively irradiating the substrate with an ArF excimer laser during …

We have studied the capabilities of the growth of quantum well structures in the Ga In
As P material system by metalorganic vapor phase epitaxy (MOVPE) for optical …

Strained-layer superlattices (SLS's) of Gax Inl _ x As/GaAs (x'"'-'0.8-O. 9) have been grown
by low pressure metalorganic vapor phase epitaxy. The reactants were trimethylgallium …

The detailed observations of selective MOCVD growth of Ga 1− x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …

Ga1− x Al x As–GaAs quantum wells are grown by atmospheric pressure MOVPE. Wells as
narrow as 25 Å are made. Interface quality in relation to alloy clustering and abruptness in …

The OMVPE growth technique has only recently been established to yield device quality III–
V compounds and alloys. The alloy receiving the most attention has been Al x Ga 1− x As …