The detailed observations of selective MOCVD growth of Ga 1− x Al x Al x As on substrates
partly masked by a SiO 2 film were carrie out in the complete range of AlAs fraction x. The …

This paper presents the first successful application of a selective MOCVD growth to
fabrication of a planar buried heterostructure laser diode. Double heterostructure of …

High-quality GaAs layers with dislocation densities of less than 5× 10 6 cm-2 on Si
substrates have been obtained through a combination of thermal-cycle annealing and …

In this paper, we report on the fabrication and characterizations of a GaAs-based laser using
the epitaxial lateral overgrowth (ELO) technique. ELO is an epitaxial growth technique …

Selective are controls of carrier concentrations in GaAs and alloy compositions in AlGaAs
have been studied by selectively irradiating the substrate with an ArF excimer laser during …

In a production-type LP-MOVPE system at a reactor pressure of 20 mbar, Al x Ga 1− x
As/GaAs structures (0< x< 0.7) have been grown on 2 inch wafers. X-ray and low …

This paper reports on the current status of laser-assisted epitaxy with III-V materials. This
technique permits in situ selective-area growth of fine grating patterns whose pitch is less …

Abstract The growth of AlGaAs-GaAs double-heterostructure lasers on Si substrates by
metalorganic chemical vapor diposition has been reported by several groups in the past few …

Room-temperature CW operation of all-MOCVD-grown Al 0.3 Ga 0.7 As/GaAs SQW lasers
on Si substrates with Al 0.5 Ga 0.5 As/Al 0.55 Ga 0.45 P intermediate layers has been …

Optimum conditions are reported for the growth of high-quality Al x Ga 1_x As by means of
vapor phase epitaxy from organometallic compounds (OMVPE). Typical values of mobili-ty …