Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy

G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
被引用次数：41 相关文章 所有 7 个版本

Strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas‐source molecular beam epitaxy

G Zhang - Applied physics letters, 1993 - pubs.aip.org
We demonstrate the first strained‐layer InGaAs/GaInAsP/GaInP separated confinement
heterostructure multiple quantum well lasers which emit at a wavelength of 0.98 μm. These …
被引用次数：19 相关文章 所有 7 个版本

Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy

RL Williams, M Dion, F Chatenoud, K Dzurko - Applied physics letters, 1991 - pubs.aip.org
Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs
graded index separate confinement heterostructure lasers operating at 1.01 μm. For broad …
被引用次数：113 相关文章 所有 6 个版本

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

SD Offsey, WJ Schaff, PJ Tasker, H Ennen… - Applied physics …, 1989 - pubs.aip.org
Strained‐layer Ga0. 7In0. 3As‐AlGaAs‐GaAs graded‐index separate confinement
heterostructure single quantum well lasers have been grown by molecular beam epitaxy …
被引用次数：41 相关文章 所有 7 个版本
[PDF] dtic.mil

Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

GJ Shiau, CP Chao, PE Burrows, SR Forrest - Applied physics letters, 1994 - pubs.aip.org
We report the growth, by gas source molecular beam epitaxy (GSMBE) of low‐threshold 1.3‐
μm wavelength strained‐layer In0. 86Ga0. 14As0. 52P0. 48/In0. 86Ga0. 14 As0. 3P0. 7 …
被引用次数：13 相关文章 所有 7 个版本
[PDF] berkeley.edu

Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps

YK Chen, MC Wu, JM Kuo, MA Chin… - Applied physics …, 1991 - pubs.aip.org
Index‐guided self‐aligned InGaAs/GaAs/InGaP quantum well lasers are fabricated by gas‐
source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first …
被引用次数：67 相关文章 所有 11 个版本
[PDF] berkeley.edu

InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

JM Kuo, YK Chen, MC Wu, MA Chin - Applied physics letters, 1991 - pubs.aip.org
We report on the first room‐temperature operation of aluminum‐free In0. 2Ga0.
8As/GaAs/In0. 49Ga0. 51P multiple‐quantum‐well lasers grown by gas‐source molecular …
被引用次数：68 相关文章 所有 10 个版本

2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

GK Kuang, G Böhm, M Grau, G Rösel, R Meyer… - Applied Physics …, 2000 - pubs.aip.org
We have fabricated InGaAs–InGaAlAs–InP strained quantum well lasers with wavelength as
long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold …
被引用次数：24 相关文章 所有 4 个版本

Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy

WT Tsang, FS Choa, MC Wu, YK Chen… - Applied physics …, 1991 - pubs.aip.org
We have succeeded in preparing 1.5 μm wavelength strained‐layer graded‐index separate
confinement heterostructure (GRINSCH) InGaAs/InGaAsP single quantum well (SQW) …
被引用次数：70 相关文章 所有 6 个版本

Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy

G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
被引用次数：61 相关文章 所有 7 个版本