1.5?1.7 ?m vpe InGaAsP/InP cw lasers × Close The Infona portal uses cookies, ie strings of
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InGaAsP/InGaP lasers emitting at 724-727 nm have been fabricated on GaAs substrates
using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2 by thinning the …

Room-temperature cw operation of InGaAsP/InP heterostructure lasers grown by liquid-
phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially …

Buried InGaAsP/InP stripe heterojunction cw lasers fabricated by combined liquid- and gas-phase
epitaxy (Journal Article) | OSTI.GOV skip to main content Sign In Create Account Show …

Fabrication and lasing characteristics of buried heterostructure InGaAsP/InP lasers emitting
at 1.3μτη are described. The optimization of stripe width and the reduction of leakage current …

A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which
uses a semi-insulating InP base structure current confinement layer formed by OMVPE …

CW operation of InGaAs/InP DH lasers grown by molecular beam epitaxy has been
achieved at a heat sink temperature of 6 C at a wavelength of 1.70 µm. This result was …

CW operation at up to 60? C at 1.65? m has been achieved in MBE-grown InGaAs/InP
buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as …

Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw
room-temperature threshold currents of 85 rnA and differential quantum efficiencies …

A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 μm
InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold …