In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

In this paper, we present the results of structural and room temperature photoluminescence
studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was …

A typical porous structure with pores diameters ranging from 10 to 50nm has been obtained
by electrochemical etching of (100) heavily doped p-type GaAs substrate in HF solution …

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM
and optical methods. The morphology, chemical composition and photoluminescence of …

Porous GaAs was prepared using electrochemical anodization technique of a cristalline
GaAs wafer in hydrofluoridric (HF) acid based-solution at different manufacturing conditions …

Porous GaAs was formed electrochemically on n-type GaAs100 in a 0.1 M HCl electrolyte.
Scanning electron microscopy revealed feature sizes of the porous structure in the …

Samples of p-type porous GaAs was obtained by electrochemical anodization of (100)
oriented p-type GaAs. The formation of porous structure has been confirmed by Raman …

The optical properties of porous GaAs formed electrochemically on n-and p-type GaAs in
HCl electrolyte are reported. The porous structure comprises GaAs crystallites ranging in …

Porous GaAs was formed by electrochemical etching of n-type GaAs wafers in HF-or HCl-
based solution with different current densities. The porous structure formation has been …