The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable
route toward integrating graphene onto conventional semiconductors. Here, we elucidate …

For the fabrication of modern graphene devices, uniform growth of high-quality monolayer
graphene on wafer scale is important. This work reports on the growth of large-scale …

Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-
compatible processes. For future application in next generation devices the accurate control …

We systematically investigate the chemical vapor deposition growth of graphene on Ge
(110) as a function of the deposition temperature close to the Ge melting point. By merging …

The practical difficulties to use graphene in microelectronics and optoelectronics is that the
available methods to grow graphene are not easily integrated in the mainstream …

Breakthroughs in cutting‐edge research fields such as hetero‐integration of materials and
the development of quantum devices are heavily bound to the control of misfit strain during …

The synthesis of graphene nanoribbons on complementary metal–oxide–semiconductor-
compatible substrates is a significant challenge hindering their integration into commercial …

The unidirectional alignment of graphene islands is essential to the synthesis of wafer-scale
single-crystal graphene on Ge (110) surface, but the underlying mechanism is not well …

Growth of high-quality graphene on germanium is to date only reported at growth
temperatures near the substrate melting point. Direct integration of graphene growth into …

Graphene grown directly on Ge via chemical vapor deposition (CVD) can passivate the
underlying Ge surface, preventing its oxidation in ambient air for at least months. However …