The transient sputtering of an amorphous Si surface with 500 eV O 2+ ion bombardment at
surface normal incidence was studied via the in-depth composition profiles for the …

An extensive study of the ripple formation on Si is presented. The ripples are characterized
with atomic force microscopy (AFM) as a function of sputter depth and also the effect of the …

This work presents a simplified technique for nanotexturing SiO 2 surfaces. Nanotextures
were obtained by a mask-less dry-etching process of a spin-coated polymethylmethacrylate …

The (001) surface of Si is irradiated with 30 keV Ga+ ions at various angles of incidence. The
surface topography of the irradiated sample is observed with atomic force microscopy (AFM) …

Ion beam erosion of Si under co-deposition circumstances supports the formation of surface
patterns on the nano-and micrometer scale. To evaluate the effect of surfactant sputtering …

The dynamics of the pattern induced on a silicon surface by oblique incidence of a 40 keV
Fe ion beam is studied. The results are compared with those obtained for two reference …

The steady-state depth distributions of Cs atoms implanted into a H-terminated Si surface at
different energies (250eV to 2keV, 45° incidence angle) were studied. In situ ToF-SIMS …

We have investigated the effect of Sb surfactants on the crystallization of Si adatoms on the
amorphous-Si (a-Si) surface during Si molecular-beam deposition. It was observed that the …

This article reports on surface density variations that are accompanied by ion-beam-induced
pattern formation processes on Si. The density profiles perpendicular to Si (100) surfaces …

The transient Si sputtering yield change of an amorphous Si for normal incident 500eV O2+
ion bombardment under oxygen flooding condition was measured quantitatively with in situ …