Mechanism of Fe impurity motivated ion-nanopatterning of Si (100) surfaces
J Zhou, M Lu - Physical Review B—Condensed Matter and Materials …, 2010 - APS
A continuum model is developed to describe surface evolution of Si (100) during normal
incidence ion sputtering with Fe incorporation. The model integrates curvature-dependent …
incidence ion sputtering with Fe incorporation. The model integrates curvature-dependent …
Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding
O El-Atwani, S Gonderman, A DeMasi… - Journal of applied …, 2013 - pubs.aip.org
We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with
various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were …
various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were …
One and two-dimensional pattern formation on ion sputtered silicon
AD Brown, HB George, MJ Aziz… - MRS Online Proceedings …, 2003 - cambridge.org
The evolution of surface morphology during ion beam erosion of Si (111) at glancing ion
incidence (60° from normal, 500 eV Ar+, 0.75 mA/cm2 collimated beam current) was studied …
incidence (60° from normal, 500 eV Ar+, 0.75 mA/cm2 collimated beam current) was studied …
Self-organized patterning on Si (001) by ion sputtering with simultaneous metal incorporation
M Cornejo, B Ziberi, C Meinecke, D Hirsch… - Applied Physics A, 2011 - Springer
This report focuses on the effect of simultaneous Fe incorporation in the self-organized
pattern formation on Si (001) by low-energy ion-beam sputtering. Experimental observations …
pattern formation on Si (001) by low-energy ion-beam sputtering. Experimental observations …
Synergetic effect between ion energy and sample temperature in the formation of distinct dot pattern on Si (1 1 0) by ion-sputter erosion
WQ Li, LJ Qi, X Yang, L Ling, WB Fan, YY Zhao… - Applied surface …, 2006 - Elsevier
We observed a synergetic effect between ion energy and sample temperature in the
formation of distinct dot pattern on Si (110) by Ar+ ion sputtering. The ion flux was 20μA/cm2 …
formation of distinct dot pattern on Si (110) by Ar+ ion sputtering. The ion flux was 20μA/cm2 …
Improvement of surface roughness in silicon-on-insulator wafer fabrication using a neutral beam etching
TH Min, BJ Park, SK Kang, GH Gweon… - Journal of Physics D …, 2009 - iopscience.iop.org
Abstract Silicon-on-insulator (SOI) wafers were etched by an energetic chlorine neutral
beam obtained by the low-angle forward reflection of an ion beam, and the surface …
beam obtained by the low-angle forward reflection of an ion beam, and the surface …
Influence of ion-beam etching by Ar ions with an energy of 200–1000 eV on the roughness and sputtering yield of a single-crystal silicon surface
MS Mikhailenko, AE Pestov, NI Chkhalo, MV Zorina… - Applied Optics, 2022 - opg.optica.org
The behavior of sputtering yield and the surface roughness of monocrystalline silicon of
orientations? 100?,? 110?, and? 111? under the ion-beam bombardment by neutralized Ar …
orientations? 100?,? 110?, and? 111? under the ion-beam bombardment by neutralized Ar …
IBMM of OH adsorbates and interphases on Si-based materials
Using ion beam modification, films composed of synthesized “interphases” of ordered silica
on OH-passivated (1× 1) Si (100) underwent surface electro-chemical changes quantified by …
on OH-passivated (1× 1) Si (100) underwent surface electro-chemical changes quantified by …
Effects of crystallographic plane and co-deposited element on the growth of ion-sputter induced Si nano-cone arrays: a mechanism study
SC Song, Y Qiu, HC Hao, M Lu - Applied Physics A, 2015 - Springer
Self-organized Si nano-cone arrays induced by Ar+ ion sputtering on different Si
crystallographic planes with different co-deposited alien atoms are investigated. The Si …
crystallographic planes with different co-deposited alien atoms are investigated. The Si …